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参数资料
| 型号： | APT30GS60BRDL |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 54 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封装： | ROHS COMPLIANT, TO-247, 3 PIN |
| 文件页数： | 8/8页 |
| 文件大小： | 247K |
| 代理商： | APT30GS60BRDL |
4
3
1
2
5
Zero
1
2
3
4
di
F/dt - Rate of Diode Current Change Through Zero Crossing.
I
F - Forward Conduction Current
I
RRM - Maximum Reverse Recovery Current.
trr - Reverse Recovery Time, measured from zero crossing where diode
Qrr - Area Under the Curve Defined by IRRM and trr.
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
Figure 9. Diode Test Circuit
Figure 10, Diode Reverse Recovery Waveform and Definitions
0.25 IRRM
CURRENT
TRANSFORMER
di
F/dt Adjust
D.U.T.
+18V
0V
trr/Qrr
Waveform
Slope = diM/dt
6
diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr.
6
Vr
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
TO-247 (B) Package Outline
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
Collector (Cathode)
Emitter (Anode)
Collector
(Cathode)
052-6353
Re
v
A
7-2008
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT30GS60BRDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT30GS60BRDQ2 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode |
| APT30GS60BRDQ2G | 功能描述:IGBT 600V 54A 250W SOT227 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT30GS60KR | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
| APT30GS60KRG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT HIGH FREQUENCY - SIN - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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