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参数资料
| 型号： | APT30GS60BRDL |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 54 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封装： | ROHS COMPLIANT, TO-247, 3 PIN |
| 文件页数： | 7/8页 |
| 文件大小： | 247K |
| 代理商： | APT30GS60BRDL |
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
0
0.2
0.4
0.6
0.8
1
1.2
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t
2
t2
t1
P
DM
Note:
Z
θ
JC
,
THERMAL
IMPED
ANCE
(°C/W)
Dissipated Power
(Watts)
T
J (°C)
T
C (°C)
Z
EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Z
EXT
.112
.437
.450
.0005
.0016
0.450
Characteristic / Test Conditions
Maximum Average Forward Current (T
C = 126°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J = 45°C, 8.3ms)
Symbol
I
F(AV)
I
F(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F = 30A
Forward Voltage
I
F = 60A
I
F = 30A, TJ = 125°C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Amps
UNIT
Volts
MIN
TYP
MAX
1.25
1.6
2.0
1.25
APT30GS60BRDL(G)
30
51
320
DYNAMIC CHARACTERISTICS
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MIN
TYP
MAX
-
64
-
317
-
962
-
7
-
561
-
2244
-
9
-
264
-
3191
-
26
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F = 30A, diF/dt = -200A/μs
V
R = 400V, TC = 25°C
I
F =30A, diF/dt = -200A/μs
V
R = 400V, TC = 125°C
I
F = 30A, diF/dt = -1000A/μs
V
R = 400V, TC = 125°C
I
F = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C
DYNAMIC CHARACTERISTICS
APT30GS60BRDL(G)
052-6353
Re
v
A
7-2008
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT30GS60BRDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT30GS60BRDQ2 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode |
| APT30GS60BRDQ2G | 功能描述:IGBT 600V 54A 250W SOT227 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT30GS60KR | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
| APT30GS60KRG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT HIGH FREQUENCY - SIN - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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