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参数资料
| 型号： | APT30GS60BRDL |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 54 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封装： | ROHS COMPLIANT, TO-247, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 247K |
| 代理商： | APT30GS60BRDL |
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G
, GATE RESISTANCE (OHMS)
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
SWITCHING
ENERGY
LOSSES
(mJ)
E
ON2
,
TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELA
Y
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(mJ)
E
OFF
,
TURN
OFF
ENERGY
LOSS
(J)
t f,
F
ALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELA
Y
TIME
(ns)
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
0
10
20
30
40
50
0
25
50
75
100
125
25
20
15
10
5
0
70
60
50
40
30
20
10
0
4000
3000
2000
1000
0
5
4
3
2
1
0
500
400
300
200
100
0
60
50
40
30
20
10
0
1600
1400
1200
1000
800
600
400
200
0
4
3
2
1
0
R
G
= 9.1
Ω, L = 100H, V
CE
= 400V
V
CE
= 400V
T
J
= 25°C
, T
J
=125°C
R
G
= 9.1
Ω
L = 100H
V
GE
= 15V
T
J
= 125°C, V
GE
= 15V
T
J
= 25 or 125°C,V
GE
= 15V
T
J
= 25°C, V
GE
= 15V
V
CE
= 400V
V
GE
= +15V
R
G
= 9.1
Ω
T
J
= 125°C, V
GE
= 15V
T
J
= 25°C, V
GE
= 15V
V
CE
= 400V
V
GE
= +15V
R
G
= 9.1
Ω
E
on2,
60A
E
off,
60A
E
off,
30A
E
on2,
30A
E
on2,
15A
E
off,
15A
R
G
= 9.1
Ω, L = 100H, V
CE
= 400V
V
GE
=15V,T
J
=125°C
V
GE
=15V,T
J
=25°C
V
CE
= 400V
R
G
= 9.1
Ω
L = 100H
V
CE
= 400V
V
GE
= +15V
R
G
= 9.1
Ω
T
J
= 125°C,V
GE
=15V
T
J
= 25°C,V
GE
=15V
E
on2,
60A
E
off,
60A
E
on2,
30A
E
off,
30A
E
on2
,
15A
E
off,
15A
V
CE
= 400V
V
GE
= +15V
T
J
= 125°C
TYPICAL PERFORMANCE CURVES
APT30GS60BRDL(G)
052-6353
Re
v
A
7-2008
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT30GS60BRDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT30GS60BRDQ2 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode |
| APT30GS60BRDQ2G | 功能描述:IGBT 600V 54A 250W SOT227 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT30GS60KR | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
| APT30GS60KRG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT HIGH FREQUENCY - SIN - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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