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参数资料
| 型号： | APT33GF120LRD |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 52 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| 封装： | TO-264, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 113K |
| 代理商： | APT33GF120LRD |
APT33GF120B2RD/LRD
052-6254
Rev
C
3-2003
VCC = 0.66 VCES
VGE = +15V
TJ = +25°C
IC = IC2
VCC = 0.66 VCES
VGE = +15V
TJ = +125°C
RG = 10
VCC = 0.66 VCES
VGE = +15V
RG = 10
IC1
0.5 IC2
IC2
IC1
Eon
Eoff
Eon
Eoff
0.5 IC2
IC2
TJ, JUNCTION TEMPERATURE (°C)
TC, CASE TEMPERATURE (°C)
Figure 8, Typical VCE(SAT) Voltage vs Junction Temperature
Figure 9, Maximum Collector Current vs Case Temperature
TJ, JUNCTION TEMPERATURE (°C)
RG, GATE RESISTANCE (OHMS)
Figure 10, Breakdown Voltage vs Junction Temperature
Figure 11, Typical Switching Energy Losses vs Gate Resistance
TJ, JUNCTION TEMPERATURE (°C)
IC, COLLECTOR CURRENT (AMPERES)
Figure 12, Typical Switching Energy Losses vs. Junction Temperature
Figure 13, Typical Switching Energy Losses vs Collector Current
F, FREQUENCY (KHz)
Figure 14,Typical Load Current vs Frequency
-50
-25
0
25
50
75
100
125
150
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
0
20
40
60
80
100
-50 -25
0
25
50
75
100 125 150
0
10
20
30
40
0.1
1.0
10
100
1000
60
40
20
0
16
12
8
4
0
4
3
2
1
0
For Both:
Duty Cycle = 50%
TJ = +125°C
Tsink = +90°C
Gate drive as specified
Powerdissapation=83W
ILOAD=IRMSoffundamental
I C
,COLLECTOR
CURRENT
(AMPERES)
TOTAL
SWITCHING
ENERGY
LOSSES
(mJ)
B
V
CES
,COLLECTOR-TO-EMITTER
BREAKDOWN
V
CE
(SAT),
COLLECTOR-TO-EMITTER
VOLTAGE
(NORMALIZED)
SATURATION
VOLTAGE
(VOLTS)
SWITCHING
ENERGY
LOSSES
(mJ)
SWITCHING
ENERGY
LOSSES
(mJ)
I C
,COLLECTOR
CURRENT
(AMPERES)
5.0
4.0
2.0
1.5
1.0
1.2
1.1
1
0.9
0.8
0.7
20
1
0.1
100
10
1
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相关代理商/技术参数 |
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