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参数资料
| 型号： | APT33GF120LRD |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 52 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| 封装： | TO-264, 3 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 113K |
| 代理商： | APT33GF120LRD |
APT33GF120B2RD/LRD
052-6254
Rev
C
3-2003
*DRIVER SAME TYPE AS D.U.T.
VCC = 0.66 VCES
Ets = Eon + Eoff
VCE(on)
td(off)
td(on)
tf
tr
1
Figure 15, Switching Loss Test Circuit and Waveforms
Figure 16, Resistive Switching Time Test Circuit and Waveforms
2
VCC
RG
RL =
.5 VCES
I C2
10%
90%
VGE(on)
VCE(off)
VGE(off)
2
1
From
Gate Drive
Circuitry
D.U.T.
B
IC
90%
10%
90%
10%
90%
Eoff
tf
td(off)
td(on)
tr
Eon
IC
VCLAMP
100uH
VCHARGE
A
B
D.U.T.
DRIVER*
VC
A
RG
VC
D.U.T.
VCE(SAT)
t=2uS
Symbol
V
F
L
S
Characteristic / Test Conditions
I
F
= 30A
Maximum Forward Voltage
I
F
= 60A
I
F
= 30A, T
J
= 150°C
Series Inductance (Lead to Lead 5mm from Base)
STATIC ELECTRICAL CHARACTERISTICS (FRED)
UNIT
Volts
nH
MIN
TYP
MAX
2.5
2.0
10
MAXIMUM RATINGS (FRED)
All Ratings: TC = 25°C unless otherwise specified.
Symbol
IF
AV
IF
RMS
I
FSM
UNIT
Amps
33GF120B2RD/LRD
30
70
210
Characteristic
Maximum Average Forward Current (T
C
= 100°C, Duty Cycle = 0.5)
RMS Forward Current
Non-Repetive Forward Surge Current (T
J
= 45°C, 8.3 ms)
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