参数资料
型号: APT5010JFLL
元件分类: JFETs
英文描述: 41 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: ISOTOP-4
文件页数: 4/5页
文件大小: 103K
代理商: APT5010JFLL
050-7029
Rev
D
3-2003
APT5010JFLL
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
176
100
10
1
16
12
8
4
0
20,000
10,000
1,000
100
10
200
100
10
1
10
100
500
0
10
20
30
40
50
0
20
40
60
80
100
120
140
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VDS=250V
VDS=100V
VDS=400V
I
D
= 46A
TJ =+150°C
TJ =+25°C
Crss
Ciss
Coss
TC =+25°C
TJ =+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
10mS
1mS
100S
V
DD
= 330V
R
G
= 5
T
J
= 125°C
L = 100H
I
D
(A)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
td(on)
td(off)
Eon
Eoff
Eon
Eoff
tr
tf
E
on
and
E
off
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t r
and
t
f
(ns)
V
DD
= 330V
R
G
= 5
T
J
= 125°C
L = 100H
10
20
30
40
50
60
70
10
20
30
40
50
60
70
10
20
30
40
50
60
70
0
5
10
15
20
25
30
35 40
45
50
80
70
60
50
40
30
20
10
0
1500
1200
900
600
300
0
V
DD
= 330V
R
G
= 5
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery.
V
DD
= 330V
I
D
= 46A
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery.
100
90
80
70
60
50
40
30
20
10
0
2500
2000
1500
1000
500
0
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