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参数资料
| 型号： | APT5010JFLL |
| 元件分类： | JFETs |
| 英文描述： | 41 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ISOTOP-4 |
| 文件页数： | 5/5页 |
| 文件大小： | 103K |
| 代理商： | APT5010JFLL |
SOT-227 (ISOTOP) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
Gate Voltage
Drain Voltage
Drain Current
90%
t
f
t
d(off)
10%
Switching Energy
T
J
= 125 C
10 %
t
d(on)
10 %
t
r
90%
Switching Energy
Drain Voltage
Drain Current
Gate Voltage
T
J
= 125 C
5 %
IC
D.U.T.
APT30DF60B
VCE
Figure 20, Inductive Switching Test Circuit
VDD
G
APT5010JFLL
相关PDF资料 |
PDF描述 |
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| APT5010JLLU2 | 41 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5010JLLU3 | 41 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5010JVRU2 | 44 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT5010JFLL_04 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT5010JLC | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. |
| APT5010JLL | 功能描述:MOSFET N-CH 500V 41A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS 7® 标准包装:10 系列:* |
| APT5010JLL_04 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 MOSFET |
| APT5010JLLU2 | 功能描述:MOSFET N-CH 500V 41A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
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