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参数资料
| 型号： | APT5010JVRU2 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 44 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ISOTOP-4 |
| 文件页数： | 1/7页 |
| 文件大小： | 417K |
| 代理商： | APT5010JVRU2 |
APT5010JVRU2
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5010J
V
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0
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pr
il,
2004
APT website – http://www.advancedpower.com
1 – 7
ISOTOP
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
G
S
D
K
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
500
V
Tc = 25°C
44
ID
Continuous Drain Current
Tc = 80°C
33
IDM
Pulsed Drain current
176
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
100
m
W
PD
Maximum Power Dissipation
Tc = 25°C
450
W
IAR
Avalanche current (repetitive and non repetitive)
44
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
2500
mJ
IFAV
Maximum Average Forward Current
Duty cycle=0.5
Tc = 80°C
30
IFRMS
RMS Forward Current (Square wave, 50% duty)
39
A
VDSS = 500V
RDSon = 100m
W max @ Tj = 25°C
ID = 44A @ Tc = 25°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Brake switch
Features
Power MOS V MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic diode
-
Avalanche energy rated
-
Very rugged
ISOTOP Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Very rugged
Low profile
ISOTOP Boost chopper
MOSFET Power Module
K
D
G
S
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