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参数资料
| 型号： | APT5010JVRU2 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 44 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ISOTOP-4 |
| 文件页数： | 3/7页 |
| 文件大小： | 417K |
| 代理商： | APT5010JVRU2 |
APT5010JVRU2
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APT website – http://www.advancedpower.com
3 – 7
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
Unit
MOSFET
0.28
RthJC
Junction to Case
Diode
1.21
RthJA
Junction to Ambient (IGBT & Diode)
20
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ,TSTG Storage Temperature Range
-55
150
TL
Max Lead Temp for Soldering:0.063” from case for 10 sec
300
°C
Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
1.5
N.m
Wt
Package Weight
29.2
g
Typical MOSFET Performance Curve
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| APT5014LLC | 37 A, 500 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT5010JVRU3 | 功能描述:MOSFET N-CH 500V 44A SOT227 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APT5010LFLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT5010LFLLG | 功能描述:MOSFET N-CH 500V 46A TO-264 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 7® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT5010LLC | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. |
| APT5010LLL | 制造商:APT 功能描述: |
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