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参数资料
| 型号： | APT5010JVRU2 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 44 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ISOTOP-4 |
| 文件页数： | 2/7页 |
| 文件大小： | 417K |
| 代理商： | APT5010JVRU2 |
APT5010JVRU2
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PT
5010J
V
R
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2–
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0
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pr
il,
2004
APT website – http://www.advancedpower.com
2 – 7
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 250A
500
V
VGS = 0V,VDS = 500V
Tj = 25°C
25
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 400V
Tj = 125°C
250
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 22A
100
m
W
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.5mA
2
4
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
7410
Coss
Output Capacitance
1050
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
390
pF
Qg
Total gate Charge
312
Qgs
Gate – Source Charge
37
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 44A @ TJ=25°C
127
nC
Td(on)
Turn-on Delay Time
18
Tr
Rise Time
16
Td(off)
Turn-off Delay Time
54
Tf
Fall Time
VGS = 15V
VBus = 250V
ID = 44A @ TJ=25°C
RG = 0.6
W
5
ns
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF = 30A
1.6
1.8
IF = 60A
1.9
VF
Diode Forward Voltage
IF = 30A
Tj = 125°C
1.4
V
VR = 600V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR = 600V
Tj = 125°C
500
A
CT
Junction Capacitance
VR = 200V
44
pF
Reverse Recovery Time
IF=1A,VR=30V
di/dt =100A/s
Tj = 25°C
23
Tj = 25°C
85
trr
Reverse Recovery Time
Tj = 125°C
160
ns
Tj = 25°C
4
IRRM
Maximum Reverse Recovery Current
Tj = 125°C
8
A
Tj = 25°C
130
Qrr
Reverse Recovery Charge
IF = 30A
VR = 400V
di/dt =200A/s
Tj = 125°C
700
nC
trr
Reverse Recovery Time
70
ns
Qrr
Reverse Recovery Charge
1300
nC
IRRM
Maximum Reverse Recovery Current
IF = 30A
VR = 400V
di/dt =1000A/s
Tj = 125°C
30
A
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