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参数资料
| 型号： | APT50GF120JRD |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 75 A, 1200 V, N-CHANNEL IGBT |
| 封装： | ISOTOP-4 |
| 文件页数： | 2/8页 |
| 文件大小： | 114K |
| 代理商： | APT50GF120JRD |
APT50GF120JRD
052-6257
Rev
B
7-2002
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
I
C = IC2, RGE = 25
, L = 68H, T
j = 25°C
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
DYNAMIC CHARACTERISTICS
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
Test Conditions
Capacitance
VGE = 0V
VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCC = 0.5VCES
IC = IC2
Resistive Switching (25°C)
VGE = 15V
VCC = 0.5VCES
IC = IC2
RG = 10
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10
TJ = +150°C
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10
TJ = +25°C
VCE = 20V, IC = IC2
MIN
TYP
MAX
3450
4200
330
470
230
350
325
490
35
40
195
300
47
94
178
360
320
480
190
380
45
90
102
210
440
880
102
210
6.4
13
5.6
12
12.0
25
46
100
115
230
390
790
100
210
10.8
22
8
UNIT
pF
nC
ns
mJ
ns
mJ
S
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
gfe
UNIT
°C/W
oz
gm
lbin
Nm
MIN
TYP
MAX
0.32
0.66
40
1.03
29.2
10
1.1
Characteristic
Junction to Case (IGBT)
Junction to Case (FRED)
Junction to Ambient
Package Weight
Mounting Torque (Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine)
Symbol
RΘJC
RΘJA
WT
Torque
相关PDF资料 |
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| APT50GF120JRD | 75 A, 1200 V, N-CHANNEL IGBT |
| APT50GF60B2RD | 80 A, 600 V, N-CHANNEL IGBT |
| APT50GF60LRD | 80 A, 600 V, N-CHANNEL IGBT, TO-264AA |
| APT50GN60B | 107 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT50GN60B | 107 A, 600 V, N-CHANNEL IGBT, TO-247AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50GF120JRDQ3 | 功能描述:IGBT 1200V 120A 521W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APT50GF120LR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs. |
| APT50GF120LRG | 功能描述:IGBT 1200V 135A 781W TO264 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT50GF60B2RD | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT50GF60BR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs. |
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