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参数资料
| 型号： | APT50GF120JRD |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 75 A, 1200 V, N-CHANNEL IGBT |
| 封装： | ISOTOP-4 |
| 文件页数： | 3/8页 |
| 文件大小： | 114K |
| 代理商： | APT50GF120JRD |
APT50GF120JRD
052-6257
Rev
B
7-2002
C,
CAPACITANCE
(pF)
I C
,COLLECTOR
CURRENT
(AMPERES)
I C
,COLLECTOR
CURRENT
(AMPERES)
V
GE
,GATE-TO-EMITTER
VOLTAGE
(VOLTS)
I C
,COLLECTOR
CURRENT
(AMPERES)
I C
,COLLECTOR
CURRENT
(AMPERES)
TC =+25°C
TJ =+150°C
SINGLE PULSE
IC = IC2
TJ = +25°C
f = 1MHz
9V
10V
8V
Cies
Cres
11V
7V
11V
10V
8V
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.05
D=0.5
0.2
0.01
SINGLE PULSE
Coes
VGE=17, 15 & 13V
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
VGE=17, 15 & 13V
TC=-55°C
TC=+150°C
0.1
OPERATION
LIMITED
BY
VCE (SAT)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 1, Typical Output Characteristics (TJ = 25°C)
Figure 2, Typical Output Characteristics (TJ = 150°C)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 3, Typical Output Characteristics @ VGE = 15V
Figure 4, Maximum Forward Safe Operating Area
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Qg, TOTAL GATE CHARGE (nC)
Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage
Figure 6, Gate Charges vs Gate-To-Emitter Voltage
RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
VCE=240V
VCE=600V
0
4
8
12
16
20
0
4
8
12
16
20
0
246
8
1
10
100
1200
.01
0.1
1.0
10
50
0
100
200
300
400
500
10-5
10-4
10-3
10-2
10-1
1.0
10
80
60
40
20
0
160
100
10
1
20
16
12
8
4
0
100s
1ms
10ms
80
60
40
20
0
80
60
40
20
0
10,000
5,000
1,000
500
100
9V
TC=+25°C
250sec.PulseTest
VGE =15V
.45
0.1
0.05
0.01
0.005
0.001
0.02
相关PDF资料 |
PDF描述 |
|---|---|
| APT50GF120JRD | 75 A, 1200 V, N-CHANNEL IGBT |
| APT50GF60B2RD | 80 A, 600 V, N-CHANNEL IGBT |
| APT50GF60LRD | 80 A, 600 V, N-CHANNEL IGBT, TO-264AA |
| APT50GN60B | 107 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT50GN60B | 107 A, 600 V, N-CHANNEL IGBT, TO-247AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50GF120JRDQ3 | 功能描述:IGBT 1200V 120A 521W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APT50GF120LR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs. |
| APT50GF120LRG | 功能描述:IGBT 1200V 135A 781W TO264 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT50GF60B2RD | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT50GF60BR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs. |
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