参数资料
型号: APT50GF120JRD
元件分类: IGBT 晶体管
英文描述: 75 A, 1200 V, N-CHANNEL IGBT
封装: ISOTOP-4
文件页数: 7/8页
文件大小: 114K
代理商: APT50GF120JRD
APT50GF120JRD
052-6257
Rev
B
7-2002
VF,ANODE-TO-CATHODEVOLTAGE(VOLTS)
diF /dt,CURRENTSLEWRATE(AMPERES/SEC)
Figure 2, Forward Voltage Drop vs Forward Current
Figure 3, Reverse Recovery Charge vs Current Slew Rate
diF /dt,CURRENTSLEWRATE(AMPERES/SEC)
TJ,JUNCTIONTEMPERATURE(°C)
Figure 4, Reverse Recovery Current vs Current Slew Rate
Figure 5, Dynamic Parameters vs Junction Temperature
diF /dt,CURRENTSLEWRATE(AMPERES/SEC)
Figure 6, Reverse Recovery Time vs Current Slew Rate
Figure 7, Forward Recovery Voltage/Time vs Current Slew Rate
VR, REVERSE VOLTAGE (VOLTS)
Figure 8, Junction Capacitance vs Reverse Voltage
C
J,
JUNCTION
CAPACITANCE
t rr
,REVERSE
RECOVERY
TIME
I RRM
,REVERSE
RECOVERY
CURRENT
I F
,FORWARD
CURRENT
(pico-FARADS)
(nano-SECONDS)
(AMPERES)
t fr
,FORWARD
RECOVERY
TIME
K
f,
DYNAMIC
PARAMETERS
Q
rr
,REVERSE
RECOVERY
CHARGE
(nano-SECONDS)
(NORMALIZED)
(nano-COULOMBS)
V
fr
,FORWARD
RECOVERY
VOLTAGE
(VOLTS)
200
160
120
80
40
0
60
45
30
15
0
300
240
180
120
60
0
2000
1000
500
100
50
TJ = 100°C
VR = 650V
TJ = 100°C
TJ = 150°C
TJ = 25°C
TJ = -55°C
trr
IRRM
Qrr
trr
120A
60A
30A
120A
60A
30A
120A
30A
60A
tfr
0
1
2
3
4
5
10
50
100
500
1000
0
200
400
600
800
1000
-50
-25
0
25
50
75
100 125
150
0
200
400
600
800
1000
0
200
400
600
800
1000
0.01
0.05
0.1
0.5
1
5
10
50
100
200
5000
4000
3000
2000
1000
0
2.0
1.6
1.2
0.8
0.4
0.0
1500
1250
1000
750
500
250
0
Vfr
30
25
20
15
10
5
0
TJ = 100°C
VR = 650V
IF =60A
TJ = 100°C
VR = 650V
TJ = 100°C
VR = 650V
相关PDF资料
PDF描述
APT50GF120JRD 75 A, 1200 V, N-CHANNEL IGBT
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