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参数资料
| 型号： | APT50GF60B2RD |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 80 A, 600 V, N-CHANNEL IGBT |
| 封装： | TMAX-3 |
| 文件页数： | 2/8页 |
| 文件大小： | 112K |
| 代理商： | APT50GF60B2RD |
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
gfe
DYNAMIC CHARACTERISTICS (IGBT)
APT50GF60B2RD/LRD
UNIT
°C/W
oz
gm
MIN
TYP
MAX
0.42
0.66
40
0.22
6.1
Characteristic
Junction to Case (IGBT)
Junction to Case (FRED)
Junction to Ambient
Package Weight
Symbol
RΘJC
RΘJA
WT
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Test Conditions
Capacitance
VGE = 0V
VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCC = 0.5VCES
IC = IC2
Resistive Switching (25°C)
VGE = 15V
VCC = .8VCES
IC = IC2
RG = 10
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10
TJ = +150°C
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10
TJ = +25°C
VCE = 20V, IC = IC2
MIN
TYP
MAX
2600
3600
475
710
165
250
170
225
25
45
100
140
20
100
160
200
30
50
90
135
290
435
170
340
2.2
2.4
4.6
30
90
260
100
4.3
6
UNIT
pF
nC
ns
mJ
ns
mJ
S
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 4
Turn-off Switching Energy
Total Switching Losses 4
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses 4
Forward Transconductance
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
See MIL-STD-750 Method 3471
3
Switching losses include the FRED and IGBT.
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6253
Rev
B
6-2002
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50GF60BR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs. |
| APT50GF60HR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs. |
| APT50GF60JCU2 | 制造商:Microsemi Corporation 功能描述:Microsemi APT50GF60JCU2 IGBTs |
| APT50GF60JU2 | 功能描述:IGBT 600V 75A 277W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APT50GF60JU3 | 功能描述:IGBT 600V 75A 277W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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