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参数资料
| 型号： | APT50GF60B2RD |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 80 A, 600 V, N-CHANNEL IGBT |
| 封装： | TMAX-3 |
| 文件页数： | 7/8页 |
| 文件大小： | 112K |
| 代理商： | APT50GF60B2RD |
052-6253
Rev
B
6-2002
APT50GF60B2RD/LRD
Z
Θ
JC
,THERMAL
IMPEDANCE
t rr
,REVERSE
RECOVERY
TIME
I RRM
,REVERSE
RECOVERY
CURRENT
I F
,FORWARD
CURRENT
(°C/W)
(nano-SECONDS)
(AMPERES)
t fr
,FORWARD
RECOVERY
TIME
K
f,
DYNAMIC
PARAMETERS
Q
rr
,REVERSE
RECOVERY
CHARGE
(nano-SECONDS)
(NORMALIZED)
(nano-COULOMBS)
V
fr
,FORWARD
RECOVERY
VOLTAGE
(VOLTS)
0
0.5
1.0
1.5
2.0
2.5
10
50
100
500
1000
0
200
400
600
800
1000
-50
-25
0
25
50
75
100 125
150
0
200
400
600
800
1000
0
200
400
600
800
1000
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
TJ = 100°C
VR = 350V
TJ = 100°C
VR = 350V
TJ = 100°C
VR = 350V
TJ = 100°C
VR = 350V
IF =60A
TJ = 150°C
TJ = -55°C
TJ = 100°C
120A
30A
Vfr
Tfr
trr
Qrr
trr
200
160
120
80
40
0
50
40
30
20
10
0
200
160
120
80
40
0
0.7
0.5
0.1
0.05
0.01
0.005
0.001
2500
2000
1500
1000
500
0
2.0
1.6
1.2
0.8
0.4
0.0
1200
1000
800
600
400
200
0
120A
60A
30A
120A
IRRM
60A
15.0
12.5
10.0
7.5
5.0
2.5
0
TJ = 25°C
60A
30A
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
VF, ANODE-TO-CATHODE VOLTAGE (VOLTS)
diF /dt, CURRENT SLEW RATE (AMPERES/SEC)
Figure 19, Forward Voltage Drop vs Forward Current
Figure 20, Reverse Recovery Charge vs Current Slew Rate
diF /dt, CURRENT SLEW RATE (AMPERES/SEC)
TJ, JUNCTION TEMPERATURE (°C)
Figure 21, Reverse Recovery Current vs Current Slew Rate
Figure 22, Dynamic Parameters vs Junction Temperature
diF /dt, CURRENT SLEW RATE (AMPERES/SEC)
Figure 23, Reverse Recovery Time vs Current Slew Rate
Figure 24, Forward Recovery Voltage/Time vs Current Slew Rate
VR, REVERSE VOLTAGE (VOLTS)
Figure 25, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
相关PDF资料 |
PDF描述 |
|---|---|
| APT50GF60LRD | 80 A, 600 V, N-CHANNEL IGBT, TO-264AA |
| APT50GN60B | 107 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT50GN60B | 107 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT50GN60BG | 107 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT50GP60JDF2 | 100 A, 600 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50GF60BR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs. |
| APT50GF60HR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs. |
| APT50GF60JCU2 | 制造商:Microsemi Corporation 功能描述:Microsemi APT50GF60JCU2 IGBTs |
| APT50GF60JU2 | 功能描述:IGBT 600V 75A 277W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APT50GF60JU3 | 功能描述:IGBT 600V 75A 277W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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