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参数资料
| 型号： | APT50GF60B2RD |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 80 A, 600 V, N-CHANNEL IGBT |
| 封装： | TMAX-3 |
| 文件页数： | 6/8页 |
| 文件大小： | 112K |
| 代理商： | APT50GF60B2RD |
052-6253
Rev
A
MIN
TYP
MAX
55
70
90
160
10
17
20
30
350
900
6
800
500
UNIT
ns
Amps
nC
Volts
A/s
Characteristic/ Test Conditions
Reverse Recovery Time, I
F
= 1.0A, di
F
/dt = -15A/s, V
R
= 30V, T
J
= 25°C
Reverse Recovery Time
T
J
= 25°C
I
F
= 60A, di
F
/dt = -480A/s, V
R
= 350V
T
J
= 100°C
Forward Recovery Time
T
J
= 25°C
I
F
= 60A, di
F
/dt = 480A/s, V
R
= 350V
T
J
= 100°C
Reverse Recovery Current
T
J
= 25°C
I
F
= 50A, di
F
/dt = -480A/s, V
R
= 350V
T
J
= 100°C
Recovery Charge
T
J
= 25°C
I
F
= 60A, di
F
/dt = -480A/s, V
R
= 350V
T
J
= 100°C
Forward Recovery Voltage
T
J
= 25°C
I
F
= 60A, di
F
/dt = 480A/s, V
R
= 350V
T
J
= 100°C
Rate of Fall of Recovery Current
T
J
= 25°C
I
F
= 60A, di
F
/dt = -480A/s, V
R
= 350V (See Figure 18)
T
J
= 100°C
DYNAMIC CHARACTERISTICS (FRED)
Symbol
t
rr1
t
rr2
t
rr3
t
fr1
t
fr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
V
fr1
V
fr2
diM/dt
PEARSON 411
CURRENT
TRANSFORMER
0.5 IRRM
di
F/dt Adjust
30H
D.U.T.
+15v
-15v
0v
Vr
4
3
1
2
5
0.75 IRRM
trr/Qrr
Waveform
Zero
6
1
2
3
4
6
di
F/dt - Current Slew Rate, Rate of Forward
Current Change Through Zero Crossing.
I
F - Forward Conduction Current
I
RRM - Peak Reverse Recovery Current.
trr - Reverse Recovery Time Measured from Point of IF
Qrr - Area Under the Curve Defined by IRRM and trr.
diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr.
Current Falling Through Zero to a Tangent Line
{
diM/dt
}
Extrapolated Through Zero Defined by 0.75 and 0.50 I
RRM.
6
Figure 17, Diode Reverse Recovery Test Circuit and Waveforms
Figure 18, Diode Reverse Recovery Waveform and Definitions
Qrr = 1/2 (trr . IRRM)
APT50GF60B2RD/LRD
相关PDF资料 |
PDF描述 |
|---|---|
| APT50GF60LRD | 80 A, 600 V, N-CHANNEL IGBT, TO-264AA |
| APT50GN60B | 107 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT50GN60B | 107 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT50GN60BG | 107 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT50GP60JDF2 | 100 A, 600 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50GF60BR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs. |
| APT50GF60HR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs. |
| APT50GF60JCU2 | 制造商:Microsemi Corporation 功能描述:Microsemi APT50GF60JCU2 IGBTs |
| APT50GF60JU2 | 功能描述:IGBT 600V 75A 277W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APT50GF60JU3 | 功能描述:IGBT 600V 75A 277W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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