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参数资料
| 型号： | APT50GN60SDQ3(G) |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 107 A, 600 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, D3PAK-3 |
| 文件页数： | 3/9页 |
| 文件大小： | 241K |
| 代理商： | APT50GN60SDQ3(G) |
050-7635
Rev
A
1-201
1
APT50GN60B_SDQ3(G)
TYPICAL PERFORMANCE CURVES
15V
9V
8V
7V
10V
V
GE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(T
J = 25°C)
FIGURE 2, Output Characteristics (T
J = 125°C)
V
GE, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
V
GE, GATE-TO-EMITTER VOLTAGE (V)
T
J, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
BV
CES
,COLLECT
OR-T
O-EMITTER
BREAKDOWN
V
CE
,COLLECT
OR-T
O-EMITTER
VOL
TAGE
(V)
I C
,COLLECT
OR
CURRENT
(A)
I C
,COLLECT
OR
CURRENT
(A)
VOL
TAGE
(NORMALIZED)
I
C,
DC
COLLECT
OR
CURRENT(A)
V
CE
,COLLECT
OR-T
O-EMITTER
VOL
TAGE
(V)
V
GE
,GA
TE-T
O-EMITTER
VOL
TAGE
(V)
I C
,COLLECT
OR
CURRENT
(A)
160
140
120
100
80
60
40
20
0
160
140
120
100
80
60
40
20
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
1.10
1.05
1.00
0.95
0.90
200
180
160
140
120
100
80
60
40
20
0
16
14
12
10
8
6
4
2
0
3.0
2.5
2.0
1.5
1.0
0.5
0
140
120
100
80
60
40
20
0
13V
11V
12V
V
CE = 120V
V
CE =480V
0
1
2
3
4
5
0
5
10
15
20
25
30
0
2
4
6
8
10
12
14
0
50
100 150 200 250 300 350 400
8
10
12
14
16
0
25
50
75
100
125
150
175
-50 -25
0
25
50
75 100 125 150 175
-50 -25
0
25
50
75 100 125 150 175
V
CE = 300V
I
C = 50A
T
J = 25°C
T
J = 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
I
C = 50A
I
C = 100A
I
C = 25A
I
C = 100A
I
C = 50A
I
C = 25A
T
J = 125°C
T
J = 25°C
T
J = -55°C
T
J = 175°C
T
J = 125°C
T
J = 25°C
T
J = -55°C
T
J = 175°C
Lead Temperature
Limited
Lead Temperature
Limited
V
GE = 15V
250μs PULSE
TEST<0.5 % DUTY
CYCLE
相关PDF资料 |
PDF描述 |
|---|---|
| APT50GN60BDQ3(G) | 107 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT50GN60SDQ3 | 107 A, 600 V, N-CHANNEL IGBT |
| APT50GN60BDQ3 | 107 A, 600 V, N-CHANNEL IGBT, TO-247 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50GN60SG | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT50GP60B | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT50GP60B2DF2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT50GP60B2DQ2 | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GP60B2DQ2G | 功能描述:IGBT 600V 150A 625W TMAX RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:POWER MOS 7® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
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