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参数资料
| 型号： | APT50GN60SDQ3(G) |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 107 A, 600 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, D3PAK-3 |
| 文件页数： | 7/9页 |
| 文件大小： | 241K |
| 代理商： | APT50GN60SDQ3(G) |
050-7635
Rev
A
1-201
1
APT50GN60B_SDQ3(G)
Characteristic / Test Conditions
Maximum Average Forward Current (T
C = 110°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J = 45°C, 8.3ms)
Symbol
I
F
(AV)
I
F
(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F = 60A
Forward Voltage
I
F = 120A
I
F = 60A, TJ = 125°C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Amps
UNIT
Volts
MIN
TYP
MAX
2.0
2.44
1.7
APT50GN60B_SDQ3(G)
60
94
600
DYNAMIC CHARACTERISTICS
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MIN
TYP
MAX
-
26
-
35
-
45
-
4
-
175
-
680
-
8
-
100
-
1380
-
26
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F = 60A, diF/dt = -200A/μs
V
R = 400V, TC = 25°C
I
F = 60A, diF/dt = -200A/μs
V
R = 400V, TC = 125°C
I
F = 60A, diF/dt = -1000A/μs
V
R = 400V, TC = 125°C
I
F = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C
Z
θ
JC
,
THERMAL
IMPED
ANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 24. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t
2
t2
t1
P
DM
Note:
D = 0.9
TYPICAL PERFORMANCE CURVES
相关PDF资料 |
PDF描述 |
|---|---|
| APT50GN60BDQ3(G) | 107 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT50GN60SDQ3 | 107 A, 600 V, N-CHANNEL IGBT |
| APT50GN60BDQ3 | 107 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT50GP60B2DQ2G | 150 A, 600 V, N-CHANNEL IGBT |
| APT50GP60B2DQ2 | 150 A, 600 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50GN60SG | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT50GP60B | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT50GP60B2DF2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT50GP60B2DQ2 | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GP60B2DQ2G | 功能描述:IGBT 600V 150A 625W TMAX RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:POWER MOS 7® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
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