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参数资料
| 型号： | APT50GN60SDQ3(G) |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 107 A, 600 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, D3PAK-3 |
| 文件页数： | 4/9页 |
| 文件大小： | 241K |
| 代理商： | APT50GN60SDQ3(G) |
APT50GN60B_SDQ3(G)
050-7635
Rev
A
1-201
1
0
1000
2000
3000
4000
5000
6000
7000
8000
10
30
50
70
90
110
V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
V
CE = 400V
R
G = 4.3Ω
L = 100 μH
SWITCHING
ENERGY
LOSSES
(
μ
J)
E
ON2
,TURN
ON
ENERGY
LOSS
(
μ
J)
t
r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELA
Y
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(
μ
J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(
μ
J)
t
f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELA
Y
TIME
(ns)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G, GATE RESISTANCE (OHMS)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
10
30
50
70
90
110
10
30
50
70
90
110
10
30
50
70
90
110
10
30
50
70
90
110
10
30
50
70
90
110
0
10
20
30
40
50
0
25
50
75
100
125
25
20
15
10
5
0
120
100
80
60
40
20
0
16000
14000
12000
10000
8000
6000
4000
2000
0
350
300
250
200
150
100
50
0
160
140
120
100
80
60
40
20
0
4000
3500
3000
2500
2000
1500
1000
500
0
6000
5000
4000
3000
2000
1000
0
V
CE = 400V
V
GE = +15V
R
G = 4.3Ω
T
J = 125°C
T
J = 25°C
V
CE = 400V
V
GE = +15V
R
G = 4.3Ω
T
J = 125°C
T
J = 25°C
V
CE = 400V
T
J = 25°C, 125°C
R
G = 4.3Ω
L = 100 μH
V
GE = 15V
R
G = 4.3Ω, L = 100
μ
H, V
CE = 400V
T
J = 25 or 125°C,VGE = 15V
R
G = 4.3Ω, L = 100
μ
H, V
CE = 400V
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
E
on2,100A
E
off,100A
E
on2,50A
E
off,50A
E
on2,25A
E
off,25A
V
CE = 400V
V
GE = +15V
T
J = 125°C
V
CE = 400V
V
GE = +15V
R
G = 4.3Ω
E
on2,100A
E
off,100A
E
on2,50A
E
off,50A
E
on2,25A
E
off,25A
TYPICAL PERFORMANCE CURVES
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50GN60SG | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT50GP60B | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT50GP60B2DF2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT50GP60B2DQ2 | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GP60B2DQ2G | 功能描述:IGBT 600V 150A 625W TMAX RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:POWER MOS 7® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
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