- 您现在的位置：买卖IC网 > PDF目录36718 > APT50GP60LDL (MICROSEMI POWER PRODUCTS GROUP) 150 A, 600 V, N-CHANNEL IGBT, TO-264AA PDF资料下载
参数资料
| 型号： | APT50GP60LDL |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 150 A, 600 V, N-CHANNEL IGBT, TO-264AA |
| 封装： | ROHS COMPLIANT, TO-264, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 174K |
| 代理商： | APT50GP60LDL |
052-6354
Re
v
A
7-2008
APT50GP60LDL(G)
TYPICAL PERFORMANCE CURVES
BV
CES
,
COLLECT
OR-T
O-EMITTER
BREAKDO
WN
V
CE
,COLLECT
OR-T
O-EMITTER
V
O
LT
A
GE
(V)
I C
,COLLECT
OR
CURRENT
(A)
I C
,COLLECT
OR
CURRENT
(A)
V
O
LT
A
GE
(NORMALIZED)
I
C,
DC
COLLECT
OR
CURRENT(A)
V
CE
,COLLECT
OR-T
O-EMITTER
V
O
LT
A
GE
(V)
V
GE
,GA
TE-T
O-EMITTER
V
O
LT
A
GE
(V)
I C
,COLLECT
OR
CURRENT
(A)
250s PULSE
TEST<0.5 % DUTY
CYCLE
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
70
60
50
40
30
20
10
0
16
14
12
10
8
6
4
2
0
33.5
3
2.5
2
1.5
1
0.5
0
200
180
160
140
120
100
80
60
40
20
0
T
J = 125°C
T
J = 25°C
T
J = -55°C
T
J = 25°C.
250s PULSE TEST
<0.5 % DUTY CYCLE
V
GE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
T
J = 125°C
T
J = 25°C
T
J = -55°C
T
J = 125°C
T
J = 25°C
T
J = -55°C
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V
GE = 15V)
FIGURE 2, Output Characteristics (V
GE = 10V)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
T
J
, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
T
J
, JUNCTION TEMPERATURE (°C)
T
C
, CASE TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80 100 120 140 160 180
6
8
10
12
14
16
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100 125 150
V
CE
= 480V
V
CE
= 300V
V
CE
= 120V
I
C
= 50A
T
J
= 25°C
I
C
= 100A
I
C
= 50A
I
C
= 25A
I
C
= 100A
I
C
= 50A
I
C
= 25A
Lead Temperature
Limited
相关PDF资料 |
PDF描述 |
|---|---|
| APT50GS60BR(G) | 93 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT50GS60SR(G) | 93 A, 600 V, N-CHANNEL IGBT |
| APT50GS60BRDQ2(G) | 93 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT50GS60SRDQ2(G) | 93 A, 600 V, N-CHANNEL IGBT |
| APT50GT120B2R | 106 A, 1200 V, N-CHANNEL IGBT, TO-247 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50GP60LDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:IGBT 600V 150A TO-264 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GP60S | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT50GP60SG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - SINGLE - Rail/Tube |
| APT50GR120B2 | 制造商:Microsemi Corporation 功能描述:IGBT 1200V 117A 694W TO247 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GR120JD30 | 制造商:Microsemi Corporation 功能描述:Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
发布紧急采购，3分钟左右您将得到回复。