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参数资料
| 型号： | APT50GP60LDL |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 150 A, 600 V, N-CHANNEL IGBT, TO-264AA |
| 封装： | ROHS COMPLIANT, TO-264, 3 PIN |
| 文件页数： | 6/8页 |
| 文件大小： | 174K |
| 代理商： | APT50GP60LDL |
052-6354
Re
v
A
7-2008
APT50GP60LDL(G)
Figure 22, Turn-on Switching Waveforms and Denitions
Figure 23, Turn-off Switching Waveforms and Denitions
APT50DL60
IC
A
D.U.T.
VCE
Figure 21, Inductive Switching Test Circuit
VCC
Collector Current
Collector Voltage
Switching Energy
5 %
10%
Gate Voltage
10%
t
d(on)
5%
t
r
90%
T
J = 125 °C
90%
Gate Voltage
Collector Voltage
Collector Current
0
t
f
90%
10%
t
d(off)
Switching Energy
T
J = 125 °C
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PDF描述 |
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| APT50GS60BRDQ2(G) | 93 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT50GS60SRDQ2(G) | 93 A, 600 V, N-CHANNEL IGBT |
| APT50GT120B2R | 106 A, 1200 V, N-CHANNEL IGBT, TO-247 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50GP60LDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:IGBT 600V 150A TO-264 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GP60S | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT50GP60SG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - SINGLE - Rail/Tube |
| APT50GR120B2 | 制造商:Microsemi Corporation 功能描述:IGBT 1200V 117A 694W TO247 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GR120JD30 | 制造商:Microsemi Corporation 功能描述:Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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