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参数资料
| 型号： | APT50GP60LDL |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 150 A, 600 V, N-CHANNEL IGBT, TO-264AA |
| 封装： | ROHS COMPLIANT, TO-264, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 174K |
| 代理商： | APT50GP60LDL |
052-6354
Re
v
A
7-2008
APT50GP60LDL(G)
V
GE
=15V,T
J
=125°C
V
GE
=15V,T
J
=25°C
V
CE
= 400V
R
G
= 4.3
Ω
L = 100H
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,
TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELA
Y
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,
TURN
OFF
ENERGY
LOSS
(J)
t f,
F
ALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELA
Y
TIME
(ns)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G
, GATE RESISTANCE (OHMS)
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
V
CE
= 400V
T
J
= 25°C
or 125°C
R
G
= 4.3
Ω
L = 100H
140
120
100
80
60
40
20
0
120
100
80
60
40
20
0
3500
3000
2500
2000
1500
1000
500
0
4000
3500
3000
2500
2000
1500
1000
500
0
V
GE
= 15V
20
30
40
50
60
70
80
90 100 110
20
30
40
50
60
70
80
90 100 110
20
30
40
50
60
70
80
90 100 110
20
30
40
50
60
70
80
90 100 110
20
30
40
50
60
70
80
90 100 110
20
30
40
50
60
70
80
90 100 110
0
10
20
30
40
50
0
25
50
75
100
125
R
G
= 4.3
Ω, L = 100H, V
CE
= 400V
T
J
= 25 or 125°C,V
GE
= 15V
25
20
15
10
5
0
90
80
70
60
50
40
30
20
10
0
4000
3500
3000
2500
2000
1500
1000
500
0
6000
5000
4000
3000
2000
1000
0
T
J
= 125°C, V
GE
= 15V
T
J
= 25°C, V
GE
= 15V
R
G
= 4.3
Ω, L = 100H, V
CE
= 400V
V
CE
= 400V
V
GE
= +15V
R
G
= 4.3
Ω
T
J
= 125°C
T
J
= 25°C
V
CE
= 400V
V
GE
= +15V
R
G
= 4.3
Ω
T
J
= 125°C
T
J
= 25°C
E
on2,
100A
E
off,
100A
V
CE
= 400V
V
GE
= +15V
T
J
= 125°C
E
on2,
25A
E
off,
25A
E
on2,
50A
E
off,
50A
E
on2,
100A
E
off,
100A
E
on2,
25A
E
off,
25A
E
on2,
50A
E
off,
50A
V
CE
= 400V
V
GE
= +15V
R
G
= 4.3
Ω
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50GP60LDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:IGBT 600V 150A TO-264 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GP60S | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT50GP60SG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - SINGLE - Rail/Tube |
| APT50GR120B2 | 制造商:Microsemi Corporation 功能描述:IGBT 1200V 117A 694W TO247 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GR120JD30 | 制造商:Microsemi Corporation 功能描述:Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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