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参数资料
| 型号： | APT50GS60SRDQ2(G) |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 93 A, 600 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, D3PAK-3 |
| 文件页数： | 3/7页 |
| 文件大小： | 607K |
| 代理商： | APT50GS60SRDQ2(G) |
V
CE(ON), COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics
FIGURE 2, Output Characteristics
V
GE, GATE-TO-EMITTER VOLTAGE (V)
V
GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
FIGURE 4, On State Voltage vs Gate-to- Emitter Voltage
T
J, Junction Temperature (°C)
GATE CHARGE (nC)
FIGURE 5, On State Voltage vs Junction Temperature
FIGURE 6, Gate Charge
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
T
C, CASE TEMPERATURE (°C)
FIGURE 7, Capacitance vs Collector-To-Emitter Voltage
FIGURE 8, DC Collector Current vs Case Temperature
C,
CAPACITANCE
(
P
F)
V
CE
,COLLECTOR-TO-EMITTER
VOLTAGE
(V)
I C
,COLLECTOR
CURRENT
(A)
I C
,COLLECTOR
CURRENT
(A)
I C,
DC
COLLECTOR
CURRENT(A)
V
GE
,GATE-TO-EMITTER
VOLTAGE
(V)
V
CE
,COLLECTOR-TO-EMITTER
VOLTAGE
(V)
I C
,COLLECTOR
CURRENT
(A)
0
1
2
3
4
5
6
0
5
10
15
20
25
30
0
2
4
6
8
10
12
6
8
10
12
14
16
0
25
50
75
100
125
150
0
50
100
150
200
250
0
100
200
300
400
500
600
25
50
75
100
125
150
125
100
75
50
25
0
150
125
100
75
50
25
0
5
4
3
2
1
0
5000
1000
100
10
250
225
200
175
150
125
100
75
50
25
0
6
5
4
3
2
1
0
16
14
12
10
8
6
4
2
0
100
90
80
70
60
50
40
30
20
10
0
V
CE = 480V
V
CE = 300V
V
CE = 120V
250s PULSE
TEST<0.5 % DUTY
CYCLE
11V
9V
8V
7V
10V
6V
T
J = 125°C
T
J = 25°C
I
C = 25A
I
C = 50A
I
C = 100A
V
GE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
I
C = 100A
I
C = 50A
I
C = 25A
VGE = 15V
T
J = 125°C
T
J = 25°C
T
J = 150°C
TJ = 125°C
IC = 25A
TJ = 25°C
T
J = 25°C.
250s PULSE TEST
<0.5 % DUTY CYCLE
C
oes
C
ies
C
res
VGE = 13 & 15V
TYPICAL PERFORMANCE CURVES
APT50GS60B_SRDQ2(G)
052-6300
Rev
A
8-2007
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| APT50GT120B2R | 106 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT50GT120B2RG | 106 A, 1200 V, N-CHANNEL IGBT, TO-247 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50GS60SRG | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
| APT50GT120B2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GT120B2R | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt IGBT |
| APT50GT120B2RDL | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Resonant Mode IGBT |
| APT50GT120B2RDLG | 功能描述:IGBT 1200V 106A 694W TO-247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
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