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参数资料
| 型号： | APT50GS60SRDQ2(G) |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 93 A, 600 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, D3PAK-3 |
| 文件页数： | 7/7页 |
| 文件大小： | 607K |
| 代理商： | APT50GS60SRDQ2(G) |
Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
e1 SAC: Tin, Silver, Copper
TO-247 Package Outline
D3 Pak Package Outline
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
C
ol
le
ct
or
(C
at
ho
de
)
Collector (Cathode)
Emitter (Anode)
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018) {3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Collector)
and Leads (Cathode)
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
D
ra
in
(Heat
Sink)
1.98 (.078)
2.08 (.082)
Gate
Collector (Cathode)
Emitter (Anode)
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
8/29/97
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/18/95
APT50GS60B_SRDQ2(G)
052-6300
Rev
A
8-2007
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PDF描述 |
|---|---|
| APT50GT120B2R | 106 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT50GT120B2RG | 106 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT50GT120B2R | 94 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT50GT120LRG | 94 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| APT50GT120LR | 94 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50GS60SRG | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
| APT50GT120B2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GT120B2R | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt IGBT |
| APT50GT120B2RDL | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Resonant Mode IGBT |
| APT50GT120B2RDLG | 功能描述:IGBT 1200V 106A 694W TO-247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
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