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参数资料
| 型号： | APT50GS60SRDQ2(G) |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 93 A, 600 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, D3PAK-3 |
| 文件页数： | 6/7页 |
| 文件大小： | 607K |
| 代理商： | APT50GS60SRDQ2(G) |
IC
A
D.U.T.
VCE
VCC
Figure 24, Turn-off Switching Waveforms and Denitions
Figure 23, Turn-on Switching Waveforms and Denitions
Figure 22, Inductive Switching Test Circuit
T
J = 125°C
Collector Current
Collector Voltage
Gate Voltage
Switching Energy
5%
10%
t
d(on)
90%
10%
t
r
5%
T
J = 125°C
Collector Voltage
Collector Current
Gate Voltage
Switching Energy
0
90%
t
d(off)
10%
t
f
90%
APT40DQ60
FOOT NOTE:
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 224H, RG = 25, IC = 50A
3 Short circuit time: VGE = 15V, VCC ≤ 600V, TJ ≤ 150°C
4 Pulse test: Pulse width < 380s, duty cycle < 2%
5 Co(cr) is dened as a xed capacitance with the same stored charge as Coes with VCE = 67% of V(BR)CES.
6 Co(er) is dened as a xed capacitance with the same stored energy as Coes with VCE = 67% of V(BR)CES. To calculate Co(er) for any value of
VCE less than V(BR)CES, use this equation: Co(er) = 5.57E-8/VDS^2 + 7.15E-8/VDS + 2.75E-10.
7 RG is external gate resistance, not including internal gate resistance or gate driver impedance (MIC4452).
8 Eon1 is the inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the
IGBT turn-on switching loss. It is measured by clamping the inductance with a Silicon Carbide Schottky diode.
9 Eon2 is the inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on energy.
10 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specications and information contained herein.
APT50GS60B_SRDQ2(G)
052-6300
Rev
A
8-2007
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相关代理商/技术参数 |
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| APT50GS60SRG | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
| APT50GT120B2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GT120B2R | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt IGBT |
| APT50GT120B2RDL | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Resonant Mode IGBT |
| APT50GT120B2RDLG | 功能描述:IGBT 1200V 106A 694W TO-247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
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