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参数资料
| 型号： | APT75GP120JDQ3 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 128 A, 1200 V, N-CHANNEL IGBT |
| 封装： | ISOTOP-4 |
| 文件页数： | 2/9页 |
| 文件大小： | 453K |
| 代理商： | APT75GP120JDQ3 |
050-7458
Rev
A
10-2005
APT75GP120JDQ3
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E
on1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 E
on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 E
off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specications and information contained herein.
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
RBSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
V
GE = 15V
V
CE = 600V
I
C = 75A
T
J = 150°C, RG = 5, VGE =
15V, L = 100H,V
CE = 960V
Inductive Switching (25°C)
V
CC = 600V
V
GE = 15V
I
C = 75A
R
G = 5
T
J = +25°C
Inductive Switching (125°C)
V
CC = 600V
V
GE = 15V
I
C = 75A
R
G = 5
T
J = +125°C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Reverse Bias Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4 4
Turn-on Switching Energy (Diode) 55
Turn-off Switching Energy 6
MIN
TYP
MAX
7035
460
80
7.5
320
50
140
300
20
40
165
55
1620
4100
2500
20
40
245
115
1620
5850
4820
UNIT
pF
V
nC
A
ns
J
ns
J
THERMAL AND MECHANICAL CHARACTERISTICS
UNIT
°C/W
gm
Volts
MIN
TYP
MAX
.23
.56
29.2
2500
Characteristic
Junction to Case
(IGBT)
Junction to Case
(DIODE)
Package Weight
RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.)
Symbol
RθJC
W
T
V
Isolation
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| APT75GT120JR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT75GT120JRDQ3 | 功能描述:IGBT 1200V 97A 480W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:Thunderbolt IGBT® 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APT75GT120JU2 | 功能描述:IGBT 1200V 100A 416W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:Trench + Field Stop IGBT® 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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| APT75M50B2 | 功能描述:MOSFET N-CH 500V 75A T-MAX RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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