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参数资料
| 型号： | APTC60TDUM35P |
| 元件分类： | JFETs |
| 英文描述： | 72 A, 600 V, 0.035 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-21 |
| 文件页数： | 2/6页 |
| 文件大小： | 333K |
| 代理商： | APTC60TDUM35P |
APTC60TDUM35P
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APT website – http://www.advancedpower.com
2 - 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 375A
600
V
VGS = 0V,VDS = 600V
Tj = 25°C
1
40
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 600V
Tj = 125°C
375
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 72A
35
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 5.4mA
2.1
3
3.9
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
±150
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
14
Coss
Output Capacitance
5.13
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.42
nF
Qg
Total gate Charge
518
Qgs
Gate – Source Charge
58
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 72A
222
nC
Td(on)
Turn-on Delay Time
21
Tr
Rise Time
30
Td(off)
Turn-off Delay Time
283
Tf
Fall Time
Inductive Switching @ 125°C
VGS = 15V
VBus = 400V
ID = 72A
RG = 2.5
84
ns
Eon
Turn-on Switching Energy
1340
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 400V
ID = 72A, RG = 2.5
1960
J
Eon
Turn-on Switching Energy
2192
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 400V
ID = 72A, RG = 2.5
2412
J
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
72
IS
Continuous Source current
(Body diode)
Tc = 80°C
54
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 72A
1.2
V
dv/dt
Peak Diode Recovery
6
V/ns
trr
Reverse Recovery Time
Tj = 25°C
580
ns
Qrr
Reverse Recovery Charge
IS = - 72A
VR = 350V
diS/dt = 200A/s
Tj = 25°C
46
C
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 72A
di/dt
≤ 200A/s
VR ≤ VDSS
Tj ≤ 150°C
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