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参数资料
| 型号： | APTC60TDUM35P |
| 元件分类： | JFETs |
| 英文描述： | 72 A, 600 V, 0.035 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-21 |
| 文件页数： | 6/6页 |
| 文件大小： | 333K |
| 代理商： | APTC60TDUM35P |
APTC60TDUM35P
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APT website – http://www.advancedpower.com
6 - 6
TJ=25°C
TJ=150°C
1
10
100
1000
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, Source to Drain Voltage (V)
I DR
,R
ever
se
D
rai
n
C
u
rr
en
t
(A
)
Source to Drain Diode Forward Voltage
Delay Times vs Current
td(on)
td(off)
0
50
100
150
200
250
300
350
0
20
40
60
80
100 120
ID, Drain Current (A)
t d(o
n
)a
nd
t
d(
off
)(n
s
)
VDS=400V
RG=2.5
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
0
20406080
100
120
ID, Drain Current (A)
t r
a
nd
t
f(n
s
)
VDS=400V
RG=2.5
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
20406080
100
120
ID, Drain Current (A)
S
w
it
c
h
in
g
E
n
e
rg
y
(
m
J)
VDS=400V
RG=2.5
TJ=125°C
L=100H
Eon
Eoff
0
2
4
6
8
10
0
5
10
15
20
25
Gate Resistance (Ohms)
S
w
it
ch
in
g
E
n
er
g
y
(
m
J)
Switching Energy vs Gate Resistance
VDS=400V
ID=72A
TJ=125°C
L=100H
hard
switching
ZCS
ZVS
0
20
40
60
80
100
120
140
15 20 25 30 35 40 45 50 55 60 65
ID, Drain Current (A)
Fr
e
que
nc
y(
k
H
z)
Operating Frequency vs Drain Current
VDS=400V
D=50%
RG=2.5
TJ=125°C
TC=75°C
“COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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