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参数资料
| 型号： | APTC60TDUM35P |
| 元件分类： | JFETs |
| 英文描述： | 72 A, 600 V, 0.035 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-21 |
| 文件页数： | 5/6页 |
| 文件大小： | 333K |
| 代理商： | APTC60TDUM35P |
APTC60TDUM35P
A
P
T
C
60T
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U
M
35P
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S
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2004
APT website – http://www.advancedpower.com
5 - 6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
Breakdown Voltage vs Temperature
BV
DS
S,
D
rai
n
t
o
S
o
u
rce
B
reakd
o
w
n
V
o
lt
ag
e
(
N
o
rm
a
li
ze
d
)
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50 -25 0
25 50 75 100 125 150
T
J, Junction Temperature (°C)
R
DS
(o
n
),
D
ra
in
t
o
S
o
u
rce
O
N
resi
st
an
ce
(N
or
m
a
li
ze
d)
VGS=10V
ID= 72A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
TC, Case Temperature (°C)
V
GS
(T
H
),
Thr
e
s
h
o
ld
V
o
lt
a
g
e
(N
or
m
a
li
ze
d)
Maximum Safe Operating Area
DC line
10 ms
1 ms
100 s
0.1
1
10
100
1000
1
10
100
1000
VDS, Drain to Source Voltage (V)
I D
,D
ra
in
C
u
rr
e
nt
(
A
)
limited by RDSon
Single pulse
TJ=150°C
Ciss
Crss
Coss
10
100
1000
10000
100000
0
102030
4050
VDS, Drain to Source Voltage (V)
C
,C
a
p
aci
ta
n
ce
(
p
F
)
Capacitance vs Drain to Source Voltage
VDS=120V
VDS=300V
VDS=480V
0
2
4
6
8
10
12
14
0
100
200
300
400
500
600
Gate Charge (nC)
V
GS
,G
a
te
t
o
S
o
u
rce
V
o
lt
ag
e
(V
)
Gate Charge vs Gate to Source Voltage
ID=72A
TJ=25°C
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