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参数资料
| 型号： | APTC80A10SCT |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 43 A, 800 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 3/7页 |
| 文件大小： | 312K |
| 代理商： | APTC80A10SCT |
APTC80A10SCT
A
PT
C
80A
10S
C
T
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
3 – 7
Parallel diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 125°C
20
A
Tj = 25°C
1.6
1.8
VF
Diode Forward Voltage
IF = 20A
Tj = 175°C
2.6
3.0
V
QC
Total Capacitive Charge
IF = 20A, VR = 600V
di/dt =1200A/s
56
nC
f = 1MHz, VR = 200V
180
Q
Total Capacitance
f = 1MHz, VR = 400V
132
pF
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
Unit
Transistor
0.3
Series diode
1.2
RthJC
Junction to Case
Parallel diode
0.8
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
Torque Mounting torque
To Heatsink
M5
4.7
N.m
Wt
Package Weight
160
g
Temperature sensor NTC
Symbol Characteristic
Min
Typ
Max
Unit
R25
Resistance @ 25°C
68
k
W
B 25/85
T25 = 298.16 K
4080
K
ú
ù
ê
é
÷÷
è
-
=
T
B
R
T
1
exp
25
85
/
25
Package outline
T: Thermistor temperature
RT: Thermistor value at T
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