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参数资料
| 型号： | APTC80A10SCT |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 43 A, 800 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 5/7页 |
| 文件大小： | 312K |
| 代理商： | APTC80A10SCT |
APTC80A10SCT
A
PT
C
80A
10S
C
T
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
5 – 7
0.90
0.95
1.00
1.05
1.10
1.15
-50
0
50
100
150
TJ, Junction Temperature (°C)
BV
DS
S
,D
rai
n
t
o
S
o
ur
c
eB
rea
kd
o
w
n
Vo
lt
ag
e
(No
rm
a
li
ze
d
)
Breakdown Voltage vs Temperature
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50
0
50
100
150
TJ, Junction Temperature (°C)
R
DS
(o
n)
,D
ra
in
t
o
S
o
u
rce
O
N
re
si
st
an
ce
(No
rm
a
li
ze
d
)
VGS=10V
ID= 21A
Threshold Voltage vs Temperature
0.7
0.8
0.9
1.0
1.1
1.2
-50
0
50
100
150
TC, Case Temperature (°C)
V
GS
(T
H
),
T
h
re
sh
ol
d
Vo
lt
ag
e
(No
rm
a
li
ze
d
)
Maximum Safe Operating Area
100ms
10ms
1ms
100s
0
1
10
100
1000
1
10
100
1000
VDS, Drain to Source Voltage (V)
I D
,Dra
in
Cu
rre
n
t(A)
limited by
RDSon
Single pulse
TJ=150°C
Ciss
Crss
Coss
10
100
1000
10000
100000
0
1020
304050
VDS, Drain to Source Voltage (V)
C,
Ca
p
ac
ita
n
c
e(p
F
)
Capacitance vs Drain to Source Voltage
VDS=160V
VDS=400V
VDS=640V
0
2
4
6
8
10
12
14
16
0
50
100
150
200
250
300
Gate Charge (nC)
Gate Charge vs Gate to Source Voltage
V
GS
,
G
a
te
t
o
S
o
u
rce
V
o
lt
ag
e
(V
)
ID=42A
TJ=25°C
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