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参数资料
| 型号： | APTC80A10SCT |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 43 A, 800 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 7/7页 |
| 文件大小： | 312K |
| 代理商： | APTC80A10SCT |
APTC80A10SCT
A
PT
C
80A
10S
C
T
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
7 – 7
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.00001
0.0001
0.001
0.01
0.1
1
Rectangular Pulse Duration (Seconds)
Th
er
m
a
lIm
p
ed
an
ce
(°
C/W
)
Forward Characteristics
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0
10
20
30
40
0
0.5
1
1.522.533.5
VF Forward Voltage (V)
I F
Fo
rw
a
rd
C
u
rr
e
nt
(
A
)
Reverse Characteristics
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0
200
400
600
800
400
600
800
1000 1200 1400 1600
VR Reverse Voltage (V)
I R
Re
ve
rs
eCu
rre
n
t(A)
Capacitance vs.Reverse Voltage
0
400
800
1200
1600
1
10
100
1000
VR Reverse Voltage
C
,C
apaci
ta
nce
(pF)
“COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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