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参数资料
| 型号： | APTGF25H120T3 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 40 A, 1200 V, N-CHANNEL IGBT |
| 封装： | MODULE-25 |
| 文件页数： | 1/6页 |
| 文件大小： | 319K |
| 代理商： | APTGF25H120T3 |
APTGF25H120T3
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APT website – http://www.advancedpower.com
1 - 6
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC= 25°C
40
IC
Continuous Collector Current
TC= 80°C
25
ICM
Pulsed Collector Current
TC= 25°C
100
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC= 25°C
208
W
RBSOA
Reverse Bias Safe Operating Area
Tj = 125°C
50A@1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Q3
11
10
Q1
CR1
7
22
13 14
CR3
3
30
29
32
18
19
23
8
15
31
R1
16
4
CR4
CR2
Q2
Q4
26
27
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
VCES = 1200V
IC = 25A @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Non Punch Through (NPT) Fast IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 50 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
-
Symmetrical design
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Benefits
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal
for easy PCB mounting
Low profile
Easy paralleling due to positive TC of VCEsat
Each leg can be easily paralleled to achieve a
phase leg of twice the current capability
Full - Bridge
NPT IGBT Power Module
相关PDF资料 |
PDF描述 |
|---|---|
| APTGF25X120P2 | 35 A, 1200 V, N-CHANNEL IGBT |
| APTGF25X120E2 | 35 A, 1200 V, N-CHANNEL IGBT |
| APTGF25X120E2G | 35 A, 1200 V, N-CHANNEL IGBT |
| APTGF25X120P2 | 35 A, 1200 V, N-CHANNEL IGBT |
| APTGF25X120P2G | 35 A, 1200 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGF25H120T3G | 功能描述:IGBT MODULE NPT FULL BRIDGE SP3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF25H120T3G_09 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Full - Bridge NPT IGBT Power Module |
| APTGF25X120E2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF25X120E2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF25X120P2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
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