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参数资料
| 型号： | APTGF25H120T3 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 40 A, 1200 V, N-CHANNEL IGBT |
| 封装： | MODULE-25 |
| 文件页数： | 2/6页 |
| 文件大小： | 319K |
| 代理商： | APTGF25H120T3 |
APTGF25H120T3
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APT website – http://www.advancedpower.com
2 - 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 500A
1200
V
Tj = 25°C
1
500
A
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 1200V
Tj = 125°C
1
mA
Tj = 25°C
2.5
3.2
3.7
VCE(on)
Collector Emitter on Voltage
VGE =15V
IC = 25A
Tj = 125°C
4.0
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 1mA
4
6
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
1650
Coes
Output Capacitance
250
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
110
pF
Qg
Total gate Charge
160
Qge
Gate – Emitter Charge
10
Qgc
Gate – Collector Charge
VGE = 15V
VBus = 300V
IC =25A
70
nC
Td(on)
Turn-on Delay Time
60
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
305
Tf
Fall Time
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 25A
RG = 22
30
ns
Td(on)
Turn-on Delay Time
60
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
346
Tf
Fall Time
40
ns
Eon
Turn-on Switching Energy
3.5
Eoff
Turn-off Switching Energy
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 25A
RG = 22
1.5
mJ
Eon includes diode reverse recovery
In accordance with JEDEC standard JESD24-1
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 125°C
500
A
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 80°C
25
A
Tj = 25°C
2.3
2.8
VF
Diode Forward Voltage
IF = 25A
VGE = 0V
Tj = 125°C
1.8
V
trr
Reverse Recovery Time
Tj = 125°C
0.13
s
Tj = 25°C
2.3
Qrr
Reverse Recovery Charge
IF = 25A
VR = 600V
di/dt =800A/s
Tj = 125°C
6
C
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相关代理商/技术参数 |
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| APTGF25H120T3G | 功能描述:IGBT MODULE NPT FULL BRIDGE SP3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF25H120T3G_09 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Full - Bridge NPT IGBT Power Module |
| APTGF25X120E2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF25X120E2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF25X120P2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
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