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参数资料
| 型号： | APTGF25H120T3 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 40 A, 1200 V, N-CHANNEL IGBT |
| 封装： | MODULE-25 |
| 文件页数： | 5/6页 |
| 文件大小： | 319K |
| 代理商： | APTGF25H120T3 |
APTGF25H120T3
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APT website – http://www.advancedpower.com
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VGE = 15V
50
55
60
65
70
75
5
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ICE, Collector to Emitter Current (A)
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Turn-On Delay Time vs Collector Current
VCE = 600V
RG = 22
VGE=15V,
TJ=25°C
VGE=15V,
TJ=125°C
200
250
300
350
400
5
1525354555
ICE, Collector to Emitter Current (A)
Turn-Off Delay Time vs Collector Current
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VCE = 600V
RG = 22
VGE=15V
0
40
80
120
160
5
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ICE, Collector to Emitter Current (A)
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Current Rise Time vs Collector Current
VCE = 600V
RG = 22
TJ = 25°C
TJ = 125°C
20
25
30
35
40
45
50
5
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45
55
ICE, Collector to Emitter Current (A)
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Current Fall Time vs Collector Current
VCE = 600V, VGE = 15V, RG = 22
TJ=25°C,
VGE=15V
TJ=125°C,
VGE=15V
0
2
4
6
8
10
5
152535
45
55
ICE, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
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VCE = 600V
RG = 22
TJ = 25°C
TJ = 125°C
0
1
2
3
4
5
1525354555
ICE, Collector to Emitter Current (A)
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L
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Turn-Off Energy Loss vs Collector Current
VCE = 600V
VGE = 15V
RG = 22
Eon, 25A
Eoff, 25A
0
1
2
3
4
5
0
10
20304050
60
Gate Resistance (Ohms)
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Switching Energy Losses vs Gate Resistance
VCE = 600V
VGE = 15V
TJ= 125°C
0
10
20
30
40
50
60
0
400
800
1200
I C
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Minimum Switching Safe Operating Area
VCE, Collector to Emitter Voltage (V)
相关PDF资料 |
PDF描述 |
|---|---|
| APTGF25X120P2 | 35 A, 1200 V, N-CHANNEL IGBT |
| APTGF25X120E2 | 35 A, 1200 V, N-CHANNEL IGBT |
| APTGF25X120E2G | 35 A, 1200 V, N-CHANNEL IGBT |
| APTGF25X120P2 | 35 A, 1200 V, N-CHANNEL IGBT |
| APTGF25X120P2G | 35 A, 1200 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGF25H120T3G | 功能描述:IGBT MODULE NPT FULL BRIDGE SP3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF25H120T3G_09 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Full - Bridge NPT IGBT Power Module |
| APTGF25X120E2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF25X120E2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF25X120P2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
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