参数资料
型号: APTGF25H120T3
元件分类: IGBT 晶体管
英文描述: 40 A, 1200 V, N-CHANNEL IGBT
封装: MODULE-25
文件页数: 3/6页
文件大小: 319K
代理商: APTGF25H120T3
APTGF25H120T3
A
P
T
G
F
25
H
120T
3–
R
ev
0
S
ept
em
be
r,
2004
APT website – http://www.advancedpower.com
3 - 6
Temperature sensor NTC
Symbol Characteristic
Min
Typ
Max
Unit
R25
Resistance @ 25°C
68
k
B 25/85
T25 = 298.16 K
4080
K
=
T
B
R
T
1
exp
25
85
/
25
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
Unit
IGBT
0.6
RthJC
Junction to Case
Diode
1
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
Torque Mounting torque
To heatsink
M4
4.7
N.m
Wt
Package Weight
110
g
Package outline
17
12
28
1
T: Thermistor temperature
RT: Thermistor value at T
相关PDF资料
PDF描述
APTGF25X120P2 35 A, 1200 V, N-CHANNEL IGBT
APTGF25X120E2 35 A, 1200 V, N-CHANNEL IGBT
APTGF25X120E2G 35 A, 1200 V, N-CHANNEL IGBT
APTGF25X120P2 35 A, 1200 V, N-CHANNEL IGBT
APTGF25X120P2G 35 A, 1200 V, N-CHANNEL IGBT
相关代理商/技术参数
参数描述
APTGF25H120T3G 功能描述:IGBT MODULE NPT FULL BRIDGE SP3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
APTGF25H120T3G_09 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Full - Bridge NPT IGBT Power Module
APTGF25X120E2 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module
APTGF25X120E2G 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APTGF25X120P2 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module