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参数资料
| 型号： | APTGF30TL60T3G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 42 A, 600 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 237K |
| 代理商： | APTGF30TL60T3G |
APTGF30TL60T3G
APT
G
F30TL
60T
3G
–
Rev
0
M
ar
ch,
2009
www.microsemi.com
2- 8
All ratings @ Tj = 25°C unless otherwise specified
Q1 to Q4 Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
250
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 600V
Tj = 125°C
500
A
Tj = 25°C
1.7
2.0
2.45
VCE(on)
Collector Emitter on Voltage
VGE =15V
IC = 30A
Tj = 125°C
2.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 1mA
4
6
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Q1 to Q4 Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
1350
Coes
Output Capacitance
193
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
120
pF
Qg
Total gate Charge
99
Qge
Gate – Emitter Charge
10
Qgc
Gate – Collector Charge
VGE = 15V
VBus = 300V
IC =30A
60
nC
Td(on)
Turn-on Delay Time
30
Tr
Rise Time
12
Td(off)
Turn-off Delay Time
80
Tf
Fall Time
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 30A
RG = 6.8Ω
15
ns
Td(on)
Turn-on Delay Time
32
Tr
Rise Time
12
Td(off)
Turn-off Delay Time
90
Tf
Fall Time
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 30A
RG = 6.8Ω
21
ns
Eon
Turn-on Switching Energy
Tj = 125°C
0.3
Eoff
Turn-off Switching Energy
VGE = 15V
VBus = 400V
IC = 30A
RG = 6.8Ω
Tj = 125°C
0.8
mJ
Isc
Short Circuit data
VGE ≤15V ; VBus = 360V
tp ≤ 10s ; Tj = 125°C
135
A
RthJC
Junction to Case Thermal Resistance
0.9
°C/W
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| APTGF30X60BTP2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
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