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参数资料
| 型号： | APTGF30TL60T3G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 42 A, 600 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件页数： | 8/8页 |
| 文件大小： | 237K |
| 代理商： | APTGF30TL60T3G |
APTGF30TL60T3G
APT
G
F30TL
60T
3G
–
Rev
0
M
ar
ch,
2009
www.microsemi.com
8- 8
CR1 to CR6 Typical performance curve
Forward Characteristic of diode
TJ=25°C
TJ=125°C
0
20
40
60
80
0.0
0.4
0.8
1.2
1.6
2.0
2.4
VF (V)
I F
(A
)
Energy losses vs Collector Current
0
0.25
0.5
0.75
1
0
2040
6080
IC (A)
E
(
m
J
)
VCE = 400V
VGE = 15V
RG = 2.5
TJ = 125°C
0
0.25
0.5
0.75
1
02
46
8
10
Gate Resistance (ohms)
E
(
m
J
)
VCE = 400V
VGE =15V
IC = 30A
TJ = 125°C
Switching Energy Losses vs Gate Resistance
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
The
rma
lIm
pe
da
nc
e
(
°C/W)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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相关代理商/技术参数 |
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| APTGF30X60BTP2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGF30X60BTP2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF30X60E2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF30X60E2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF30X60P2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
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