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参数资料
| 型号： | APTGF30TL60T3G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 42 A, 600 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件页数： | 7/8页 |
| 文件大小： | 237K |
| 代理商： | APTGF30TL60T3G |
APTGF30TL60T3G
APT
G
F30TL
60T
3G
–
Rev
0
M
ar
ch,
2009
www.microsemi.com
7- 8
Cies
Cres
Coes
10
100
1000
10000
0
1020
304050
C
,Cap
aci
tan
ce
(p
F
)
Capacitance vs Collector to Emitter Voltage
VCE, Collector to Emitter Voltage (V)
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
The
rm
a
lI
m
pe
da
nc
e
(°C
/W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Operating Frequency vs Collector Current
hard
switching
0
40
80
120
160
200
240
0
1020
3040
50
IC, Collector Current (A)
F
ma
x,
O
p
e
ra
ti
n
g
Fr
e
que
nc
y
(k
H
z
)
VCE = 400V
D = 50%
RG = 6.8
TJ = 125°C
TC= 75°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGF30X60BTP2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGF30X60BTP2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF30X60E2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF30X60E2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF30X60P2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
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