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参数资料
| 型号： | APTGF30TL60T3G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 42 A, 600 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 237K |
| 代理商： | APTGF30TL60T3G |
APTGF30TL60T3G
APT
G
F30TL
60T
3G
–
Rev
0
M
ar
ch,
2009
www.microsemi.com
5- 8
Q1 to Q4 Typical performance curve
Output characteristics (VGE=15V)
TJ=25°C
TJ=125°C
0
10
20
30
40
50
60
01
2
3
4
Ic,
C
o
llector
C
u
rr
ent
(A
)
VCE, Collector to Emitter Voltage (V)
250s Pulse Test
< 0.5% Duty cycle
Transfer Characteristics
TJ=25°C
TJ=125°C
0
20
40
60
80
012
34567
89
10
VGE, Gate to Emitter Voltage (V)
Ic,
C
o
llec
tor
Current
(A
)
250s Pulse Test
< 0.5% Duty cycle
0.80
0.90
1.00
1.10
1.20
25
50
75
100
125
TJ, Junction Temperature (°C)
Colle
ct
or
t
o
Emit
te
rBr
ea
k
down
V
o
lt
age
(
N
orma
liz
e
d
)
Breakdown Voltage vs Junction Temp.
0
10
20
30
40
50
25
50
75
100
125
150
TC, Case Temperature (°C)
Ic
,D
C
o
llec
tor
C
u
rr
e
n
t(
A
)
DC Collector Current vs Case Temperature
Gate Charge
VCE=120V
VCE=300V
VCE=480V
0
2
4
6
8
10
12
14
16
18
0
20406080
100
120
Gate Charge (nC)
V
GE
,Gate
to
Em
itte
rV
o
lt
a
g
e
(V
)
IC = 30A
TJ = 25°C
Output Characteristics (VGE=10V)
TJ=25°C
TJ=125°C
0
12.5
25
37.5
50
01
23
4
Ic
,C
o
lle
ct
or
C
u
rr
ent
(
A
)
VCE, Collector to Emitter Voltage (V)
250s Pulse Test
< 0.5% Duty cycle
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGF30X60BTP2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGF30X60BTP2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF30X60E2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF30X60E2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF30X60P2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
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