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参数资料
| 型号： | APTGL180A120T3AG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 230 A, 1200 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 197K |
| 代理商： | APTGL180A120T3AG |
APTGL180A120T3AG
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2011
www.microsemi.com
1- 5
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC = 25°C
230
IC
Continuous Collector Current
TC = 100°C
180
ICM
Pulsed Collector Current
TC = 25°C
300
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
940
W
RBSOA Reverse Bias Safe Operating Area
Tj = 125°C
300A @ 1100V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
29
13
30 31
32
R1
23
22
28
25
27
26
7
8
3
4
18
16
20
19
14
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
Pins 29/30/31/32 must be shorted together
Pins 26/27/28/22/23/25 must be shorted together
to achieve a phase leg
Pins 16/18/19/20 must be shorted together
VCES = 1200V
IC = 180A @ Tc = 100°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Trench + Field Stop IGBT 4 Technology
-
Low voltage drop
-
Low leakage current
-
Low switching losses
-
Soft recovery parallel diodes
-
Low diode VF
-
RBSOA and SCSOA rated
Very low stray inductance
Kelvin emitter for easy drive
Internal thermistor for temperature monitoring
High level of integration
AlN substrate for improved thermal performance
Benefits
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
Phase leg
Trench + Field Stop IGBT4
Power Module
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGL180A120T3AG_11 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Phase leg Trench + Field Stop IGBT4 Power Module |
| APTGL240TL120G | 功能描述:POWER MOD IGBT4 3LVL INVERT SP6 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGL30H120T1G | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Full bridge Trench + Field Stop IGBT4 Power Module |
| APTGL30X120T3G | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:3 Phase bridge Trench + Field Stop IGBT4 Power Module |
| APTGL325A120D3G | 功能描述:IGBT4 PHASE LEG 1200V 420A D3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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