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参数资料
| 型号： | APTGL180A120T3AG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 230 A, 1200 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 197K |
| 代理商： | APTGL180A120T3AG |
APTGL180A120T3AG
A
P
TGL180A120T
3A
G
–
Re
v2
M
arc
h,
2011
www.microsemi.com
2- 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
300
A
Tj = 25°C
1.8
2.2
VCE(sat)
Collector Emitter saturation Voltage
VGE = 15V
IC = 150A
Tj = 150°C
2.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 5.5 mA
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
200
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
9.3
Coes
Output Capacitance
0.58
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
0.5
nF
QG
Gate charge
VGE= -8V / 15V ; VCE=600V
IC=150A
0.85
C
Td(on)
Turn-on Delay Time
130
Tr
Rise Time
20
Td(off)
Turn-off Delay Time
300
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VCE = 600V
IC = 150A
RG = 3Ω
45
ns
Td(on)
Turn-on Delay Time
150
Tr
Rise Time
35
Td(off)
Turn-off Delay Time
350
Tf
Fall Time
Inductive Switching (150°C)
VGE = ±15V
VCE = 600V
IC = 150A
RG = 3Ω
80
ns
Eon
Turn-on Switching Energy
TJ = 150°C
13.5
mJ
Eoff
Turn-off Switching Energy
VGE = ±15V
VCE = 600V
IC = 150A
RG = 3Ω
TJ = 150°C
14.5
mJ
Isc
Short Circuit data
VGE ≤15V ; VBus = 900V
tp ≤10s ; Tj = 150°C
600
A
Reverse diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
150
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 125°C
600
A
IF
DC Forward Current
Tc = 100°C
120
A
IF = 120A
2.5
3
IF = 240A
3
VF
Diode Forward Voltage
IF = 120A
Tj = 125°C
1.8
V
Tj = 25°C
265
trr
Reverse Recovery Time
Tj = 125°C
350
ns
Tj = 25°C
1120
Qrr
Reverse Recovery Charge
IF = 120A
VR = 800V
di/dt =400A/s
Tj = 125°C
5780
nC
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGL180A120T3AG_11 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Phase leg Trench + Field Stop IGBT4 Power Module |
| APTGL240TL120G | 功能描述:POWER MOD IGBT4 3LVL INVERT SP6 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGL30H120T1G | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Full bridge Trench + Field Stop IGBT4 Power Module |
| APTGL30X120T3G | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:3 Phase bridge Trench + Field Stop IGBT4 Power Module |
| APTGL325A120D3G | 功能描述:IGBT4 PHASE LEG 1200V 420A D3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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