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参数资料
| 型号： | APTGT100TL60T3G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 150 A, 600 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件页数： | 3/7页 |
| 文件大小： | 218K |
| 代理商： | APTGT100TL60T3G |
APTGT100TL60T3G
APT
G
T
100T
L
60T
3G
–
Rev
0
Februar
y,
2009
www.microsemi.com
3- 7
CR1 to CR4 diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 150°C
500
A
IF
DC Forward current
Tc = 80°C
75
A
Tj = 25°C
1.6
2
VF
Diode Forward Voltage
IF = 75A
VGE = 0V
Tj = 150°C
1.5
V
Tj = 25°C
100
trr
Reverse Recovery Time
Tj = 150°C
150
ns
Tj = 25°C
3.6
Qrr
Reverse Recovery Charge
Tj = 150°C
7.6
C
Tj = 25°C
0.85
Err
Reverse Recovery Energy
IF = 75A
VR = 300V
di/dt =2000A/s
Tj = 150°C
1.8
mJ
RthJC
Junction to Case Thermal Resistance
0.98
°C/W
CR5 & CR6 diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 150°C
500
A
IF
DC Forward Current
Tc = 80°C
100
A
Tj = 25°C
1.6
2
VF
Diode Forward Voltage
IF = 100A
VGE = 0V
Tj = 150°C
1.5
V
Tj = 25°C
125
trr
Reverse Recovery Time
Tj = 150°C
220
ns
Tj = 25°C
4.7
Qrr
Reverse Recovery Charge
Tj = 150°C
9.9
C
Tj = 25°C
1.1
Err
Reverse Recovery Energy
IF = 100A
VR = 300V
di/dt =2000A/s
Tj = 150°C
2.4
mJ
RthJC
Junction to Case Thermal Resistance
0.77
°C/W
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
Characteristic
Min
Typ
Max
Unit
R25
Resistance @ 25°C
50
k
Ω
R25/R25
5
%
B25/85
T25 = 298.15 K
3952
K
B/B
TC=100°C
4
%
=
T
B
R
T
1
exp
25
85
/
25
T: Thermistor temperature
RT: Thermistor value at T
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