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参数资料
| 型号： | APTGT100TL60T3G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 150 A, 600 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件页数： | 5/7页 |
| 文件大小： | 218K |
| 代理商： | APTGT100TL60T3G |
APTGT100TL60T3G
APT
G
T
100T
L
60T
3G
–
Rev
0
Februar
y,
2009
www.microsemi.com
5- 7
Output Characteristics (VGE=15V)
TJ=25°C
TJ=125°C
TJ=150°C
0
25
50
75
100
125
150
175
200
00.5
1
1.5
22.5
3
VCE (V)
I C
(A)
Output Characteristics
VGE=15V
VGE=13V
VGE=19V
VGE=9V
0
25
50
75
100
125
150
175
200
00.5
11.522.5
33.5
VCE (V)
I C
(A
)
TJ = 150°C
Transfert Characteristics
TJ=25°C
TJ=125°C
TJ=150°C
0
25
50
75
100
125
150
175
200
56
78
9
10
11
12
VGE (V)
I C
(A)
Energy losses vs Collector Current
Eon
Eoff
0
1
2
3
4
5
6
7
0
25
50
75 100 125 150 175 200
IC (A)
E
(
m
J
)
VCE = 300V
VGE = 15V
RG = 3.3
TJ = 150°C
Eon
Eoff
0
2
4
6
8
0
5
10
15
20
25
30
Gate Resistance (ohms)
E
(
m
J
)
VCE = 300V
VGE =15V
IC = 100A
TJ = 150°C
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
0
50
100
150
200
250
0
100 200 300 400 500 600 700
VCE (V)
I F
(A
)
VGE=15V
TJ=150°C
RG=3.3
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
The
rm
a
lIm
p
e
da
nc
e
(°C
/W
)
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