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参数资料
| 型号： | APTGT100TL60T3G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 150 A, 600 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件页数： | 6/7页 |
| 文件大小： | 218K |
| 代理商： | APTGT100TL60T3G |
APTGT100TL60T3G
APT
G
T
100T
L
60T
3G
–
Rev
0
Februar
y,
2009
www.microsemi.com
6- 7
CR1 to CR4 Typical performance curve
Energy losses vs Collector Current
0
1
2
3
0
25
50
75
100
125
150
IF (A)
E
(
m
J
)
VCE = 300V
RG = 4.7
TJ = 150°C
0
0.5
1
1.5
2
0
5
10
15
20
25
30
35
Gate Resistance (ohms)
E
(m
J)
VCE = 300V
IC = 75A
TJ = 150°C
Switching Energy Losses vs Gate Resistance
Forward Characteristic of diode
TJ=25°C
TJ=150°C
0
25
50
75
100
125
150
0
0.4
0.8
1.2
1.6
2
2.4
VF (V)
I F
(A)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
1.2
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
Th
e
rm
a
lIm
p
e
da
nc
e
(
°C
/W)
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