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参数资料
| 型号： | APTGT50X170BTP3G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 45 A, 1700 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, MODULE-35 |
| 文件页数： | 1/8页 |
| 文件大小： | 302K |
| 代理商： | APTGT50X170BTP3G |
APTGT50X170RTP3G
APTGT50X170BTP3G
A
P
T
G
T
50
X
170B
T
P
3G
–
R
ev
2
M
ay,
2007
www.microsemi.com
1 - 8
All ratings @ Tj = 25°C unless otherwise specified
1. Absolute maximum ratings
Diode rectifier Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VRRM
Repetitive Peak Reverse Voltage
1600
V
ID
DC Forward Current
TC= 80°C
80
Tj = 25°C
500
IFSM
Surge Forward Current
tp = 10ms
Tj = 150°C
400
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
CR12
23
CR10
21
1
2
3
CR11 CR13 CR15
CR14
9
R
6
Q5
5
16
15
8
10
Q6
4
18
17
11
19
Q2
13
12
Q1
20
14
24
7
CR7
Q4
Q3
22
Q7
APTGT50X170RTP3G: Without Brake (Pin 7 & 14 not connected)
9
8
7
45
6
22
23
24
123
17
18
19
20
10
11
12
14 13
16 15
21
VCES = 1700V
IC = 50A @ Tc = 80°C
Application
AC Motor control
Features
Trench + Field Stop IGBT Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Low stray inductance
High level of integration
Kelvin emitter for easy drive
Low stray inductance
Internal thermistor for temperature monitoring
Benefits
Low conduction losses
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
Input rectifier bridge + Brake + 3 Phase Bridge
Trench + Field Stop IGBT
Power Module
相关PDF资料 |
PDF描述 |
|---|---|
| APTGT50X170RTP3 | 70 A, 1200 V, N-CHANNEL IGBT |
| APTGT50X170BTP3 | 70 A, 1700 V, N-CHANNEL IGBT |
| APTGT50X170BTP3 | 70 A, 1700 V, N-CHANNEL IGBT |
| APTGT50X170RTP3 | 70 A, 1200 V, N-CHANNEL IGBT |
| APTGT50X60T3G | 80 A, 600 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGT50X170BTPG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT50X170RTP3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module |
| APTGT50X170TRPG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT50X60T3G | 功能描述:IGBT TRENCH 3PHASE BRIDGE SP3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGT580U60D4G | 功能描述:IGBT 600V 760A 1600W D4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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