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参数资料
| 型号： | APTGT50X170BTP3G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 45 A, 1700 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, MODULE-35 |
| 文件页数： | 2/8页 |
| 文件大小： | 302K |
| 代理商： | APTGT50X170BTP3G |
APTGT50X170RTP3G
APTGT50X170BTP3G
A
P
T
G
T
50
X
170B
T
P
3G
–
R
ev
2
M
ay,
2007
www.microsemi.com
2 - 8
IGBT & Diode Brake (only for APTGT50X170BTP3G) Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1700
V
TC= 25°C
45
IC
Continuous Collector Current
TC= 80°C
30
ICM
Pulsed Collector Current
TC= 25°C
70
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC= 25°C
210
W
IF
DC Forward Current
TC= 80°C
50
A
IGBT & Diode Inverter Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC= 25°C
70
IC
Continuous Collector Current
TC= 80°C
50
ICM
Pulsed Collector Current
TC= 25°C
100
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC= 25°C
310
W
RBSOA
Reverse Bias Safe Operating Area
Tj = 125°C
100A @ 1700V
IF
DC Forward Current
TC= 80°C
50
IFRM
Repetitive Peak Forward Current
tp = 1ms
100
A
2. Electrical Characteristics
Diodes Rectifier Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IR
Reverse Current
VR = 1600V
Tj = 150°C
3
mA
VF
Forward Voltage
IF = 50A
Tj = 150°C
1.0
V
RthJC
Junction to Case Thermal Resistance
0.65
°C/W
IGBT Brake & Diode (only for APTGT50X170BTP3G) Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1700V
250
A
Tj = 25°C
2.0
2.4
VCE(on)
Collector Emitter on Voltage
VGE = 15V
IC = 30A
Tj = 125°C
2.4
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 1.5mA
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
600
nA
Cies
Input Capacitance
2500
Cres
Reverse Transfer Capacitance
VGE = 0V,VCE = 25V
f = 1MHz
90
pF
Tj = 25°C
1.8
2.2
VF
Forward Voltage
VGE = 0V
IF = 50A
Tj = 125°C
1.9
V
IGBT
0.6
RthJC
Junction to Case Thermal Resistance
Diode
0.7
°C/W
相关PDF资料 |
PDF描述 |
|---|---|
| APTGT50X170RTP3 | 70 A, 1200 V, N-CHANNEL IGBT |
| APTGT50X170BTP3 | 70 A, 1700 V, N-CHANNEL IGBT |
| APTGT50X170BTP3 | 70 A, 1700 V, N-CHANNEL IGBT |
| APTGT50X170RTP3 | 70 A, 1200 V, N-CHANNEL IGBT |
| APTGT50X60T3G | 80 A, 600 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGT50X170BTPG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT50X170RTP3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module |
| APTGT50X170TRPG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT50X60T3G | 功能描述:IGBT TRENCH 3PHASE BRIDGE SP3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGT580U60D4G | 功能描述:IGBT 600V 760A 1600W D4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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