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参数资料
| 型号： | APTM100UM65SCAVG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 145 A, 1000 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP6, 5 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 266K |
| 代理商： | APTM100UM65SCAVG |
APTM100UM65SCAVG
APTM100UM65S
CAVG
–
Rev
0
Septem
ber,
2009
www.microsemi.com
3 – 8
Series diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
200
V
Tj = 25°C
350
IRM
Maximum Reverse Leakage Current
VR=200V
Tj = 125°C
600
A
IF
DC Forward Current
Tc = 80°C
120
A
IF = 120A
1.1
1.15
IF = 240A
1.4
VF
Diode Forward Voltage
IF = 120A
Tj = 125°C
0.9
V
Tj = 25°C
31
trr
Reverse Recovery Time
Tj = 125°C
60
ns
Tj = 25°C
120
Qrr
Reverse Recovery Charge
IF = 120A
VR = 133V
di/dt = 400A/s
Tj = 125°C
500
nC
SiC Parallel diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
384
2400
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 125°C
672
12000
A
IF
DC Forward Current
Tc = 125°C
120
A
Tj = 25°C
1.6
1.8
VF
Diode Forward Voltage
IF = 120A
Tj = 175°C
2.3
3.0
V
QC
Total Capacitive Charge
IF = 120A, VR = 600V
di/dt =5000A/s
480
nC
f = 1MHz, VR = 200V
1152
C
Total Capacitance
f = 1MHz, VR = 400V
828
pF
Thermal and package characteristics
Symbol
Characteristic
Min
Typ
Max
Unit
Transistor
0.038
Series diode
0.46
RthJC
Junction to Case Thermal Resistance
SiC Parallel diode
0.18
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
4000
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
To heatsink
M6
3
5
M5
2
3.5
Torque Mounting torque
For terminals
M3
1
1.5
N.m
Wt
Package Weight
280
g
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