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参数资料
| 型号： | APTM100UM65SCAVG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 145 A, 1000 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP6, 5 PIN |
| 文件页数： | 7/8页 |
| 文件大小： | 266K |
| 代理商： | APTM100UM65SCAVG |
APTM100UM65SCAVG
APTM100UM65S
CAVG
–
Rev
0
Septem
ber,
2009
www.microsemi.com
7 – 8
Delay Times vs Current
td(on)
td(off)
0
40
80
120
160
50
94
138
182
226
270
ID, Drain Current (A)
t d(
on)
a
nd
t
d(
of
f)
(ns)
VDS=670V
RG=0.75
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
50
94
138
182
226
270
ID, Drain Current (A)
t r
and
t
f(ns
)
VDS=670V
RG=0.75
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
2
4
6
8
10
50
94
138
182
226
270
ID, Drain Current (A)
S
w
it
ch
in
g
E
n
erg
y
(
m
J)
VDS=670V
RG=0.75
TJ=125°C
L=100H
Eon
Eoff
2
6
10
14
18
22
26
01
234567
8
Gate Resistance (Ohms)
S
w
it
ch
in
g
E
n
erg
y
(
m
J)
Switching Energy vs Gate Resistance
VDS=670V
ID=145A
TJ=125°C
L=100H
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
15
35
55
75
95
115
135
ID, Drain Current (A)
F
req
uen
cy
(kHz)
Operating Frequency vs Drain Current
VDS=670V
D=50%
RG=0.75
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
I DR
,Reverse
Drai
n
Curren
t(A)
Source to Drain Diode Forward Voltage
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