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参数资料
| 型号： | APTM100UM65SCAVG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 145 A, 1000 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP6, 5 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 266K |
| 代理商： | APTM100UM65SCAVG |
APTM100UM65SCAVG
APTM100UM65S
CAVG
–
Rev
0
Septem
ber,
2009
www.microsemi.com
5 – 8
Typical MOSFET Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.005
0.01
0.015
0.02
0.025
0.03
0.035
0.04
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Th
e
rm
a
lImpe
da
nc
e
(°
C
/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5V
5.5V
6V
6.5V
7V
0
40
80
120
160
200
240
280
320
360
0
5
10
15
20
25
30
VDS, Drain to Source Voltage (V)
I D
,Drai
n
Cu
rren
t(
A
)
VGS=15, 10V
Low Voltage Output Characteristics
Transfert Characteristics
TJ=25°C
TJ=125°C
0
80
160
240
320
400
480
01
2
345
6
7
8
VGS, Gate to Source Voltage (V)
I D
,Drai
n
Cu
rren
t(
A
)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.8
0.9
1
1.1
1.2
1.3
1.4
0
80
160
240
320
ID, Drain Current (A)
R
DS
(o
n
)Drai
n
to
S
o
urce
ON
R
esi
stan
ce
Normalized to
VGS=10V @ 72.5A
0
40
80
120
160
25
50
75
100
125
150
TC, Case Temperature (°C)
I D
,DC
Dra
in
Cu
rrent
(A)
DC Drain Current vs Case Temperature
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